Ramp Reversal Memory – a new kind of memory in correlated Oxides

by Amos Sharoni

Bar-Ilan University

at Physics Colloquium

Tue, 06 Dec 2022, 15:15
Ilse Katz Institute for Nanoscale Science & Technology (51), room 015

Abstract

The ramp reversal memory (RRM) [1] is a non-volatile memory effect we discovered in correlated oxides with temperature-driven insulator-metal transitions (IMT), such as VO2, V2O3 and NdNiO3. The memory appears as a resistance increase at predefined temperatures that are set or erased by simple heating-cooling (i.e., ramp-reversal) protocols. The characteristics of this memory effect do not coincide with any previously reported history or memory effects in similar systems.

I will review the broad range of experimental features of the RRM, and numerical modelling performed. From these we conclude that the main ingredients for the effect to arise are the spatial phase-separation of metallic and insulating regions during the IMT and the coupling of local strain to the critical temperature of the phase transition, resulting in a localized increase of the transition temperature along phase boundaries [2]. Similar memory effects are predicted to arise in other materials that possess these rather common ingredients.

[1] Adv. Mater. 2017, 29, 1605029
[2] Phys. Rev. B https://journals.aps.org/prb/accepted/ff07cO36G9f1da47d59d10e8c37797349f10b1b59

*** Refreshments will be served from 15:00 ***

Created on 22-11-2022 by Kats, Yevgeny (katsye)
Updaded on 27-11-2022 by Kats, Yevgeny (katsye)