Materials Science of switching in nanomagnets and memristors

by Ilan Goldfarb

at Condensed Matter Seminar

Mon, 12 Dec 2016, 11:30
Physics building (#54) room 207

Abstract

A reversible switching phenomenon is usually based on some sort of hysteretic behavior e g electronic ionic magnetic mechanical etc While physics and chemistry govern the process contemporary materials science is vital for understanding the corresponding synthesis structure properties triangle In this context I will survey our recent work on magnetic transition metal silicide nanostructures and transition metal oxide memristors In the former synthesis of the nanostructures will be shown to have the highest impact on the observed magnetic properties even in the phases that are not magnetic in their bulk form by means of controlling the nanostructure size shape and position In the latter it will be demonstrated how detailed characterization of the oxide chemistry and electronic structure using photoemission spectroscopy and analytical transmission electron microscopy helped us to identify the crucial role of oxygen ions and vacancies in the switching mechanism

Created on 09-12-2016 by Bar Lev, Yevgeny (ybarlev)
Updaded on 09-12-2016 by Bar Lev, Yevgeny (ybarlev)