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Phys. Rev. Lett. 108, 159701 (2012) [2 pages]

Comment on “Magnetic-Field-Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films”

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G. J. Conduit and Y. Meir
Ben Gurion University, Beer Sheva 84105, Israel

Received 30 November 2011; published 12 April 2012

A Comment on the Letter by Yen-Hsiang Lin and A. M. Goldman, Phys. Rev. Lett. 106 127003 (2011). The authors of the Letter offer a Reply.

© 2012 American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.108.159701
DOI:
10.1103/PhysRevLett.108.159701
PACS:
74.40.Kb, 74.25.F-, 74.62.En, 74.78.Fk

See Also

Reply: Yen-Hsiang Lin and A. M. Goldman, Lin and Goldman Reply:, Phys. Rev. Lett. 108, 159702 (2012).

Original Article: Yen-Hsiang Lin and A. M. Goldman, Magnetic-Field-Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films, Phys. Rev. Lett. 106, 127003 (2011).

 
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