Eldad
Peretz
Scanning
Tunneling Microscopy
Curriculum
Vitae
March
2010
Personal Information:
I was born in September 1975, in
Education:
2006 - Present |
Ph.D
In Physics, Supervised by Prof. Yishay Manassen (Physics) and Prof. Roni Z. Shneck (Material Engineering). "Mezoscopic
Elasticity of Surface and |
2003 - 2006 |
M.Sc In Physics,
Supervised by Prof. Yishay Manassen (Physics) and Dr. Roni Z. Shneck (Material Engineering). "Mezoscopic Elasticity of Surface and NanoScale ilands". |
2000 - 2003 |
B.Sc
in Physics, |
Employment:
2003 - Present |
Teaching Assistant in Advanced Laboratory for undergraduate Physics students. Instructor for the following experiments: ý UHV. ý LEED. ý STM. ý X-RAY. |
2008- Present |
Ilan Ramon Youth physics center. ý Lecturer of "Radiation and Material" course for senior high school classes. ý Lab instructor in physics for senior high school. |
Publications:
"
H. Ralphe,
E. Peretz,
Physical Review letters 104, 056102 (2010)
Yet to be submitted!
"Understanding of the
Elastic fields that induce Self Ordering of Quantum Dots"
E. Peretz, R.Z. Shneck, D. Barlam and Y. Manassen
To be submitted soon
"Interaction energy
calculation in Multy Layers Self Ordering Quantum
Dots"
E. Peretz, R.Z. Shneck, D. Barlam and Y. Manassen
To be submitted soon
"Local Surface Stress Measurement
on a Si (111) 7x7 Surface Using Scanning Tunneling Microscopy"
E. Peretz, A. Hazarika,
To be submitted soon
"STM determination of
the Young Modulus of CdS nanoparticles"
E. Peretz, A. Hazarika,
P. K. Santra,
To be submitted soon
About my Research:
My research deals with elasticity in the nanometer scale, near the lower edge of the continuum mechanics.
When one goes down the scale to the nanometer scale, how does the elasticity changes, and how the elastic properties of the material does changes. I'm asking quantitatively and qualitatively what is the change in young's modulus of a nanoparticle that have a 3nm diameter, and what is the local ( in atomic resolution ) surface stress of a silicon surface, and more questions in this direction.
In order to answer those questions I assemble Different experiment with Scanning Tunneling Microscopy (STM) and try to explain the result in with elasticity theory, for each type of question.
Using (STM) one can see both lateral and vertical atomic displacements of the surface atoms. These displacements are due to internal stress source such as steps, dislocations and more. Or due to external stress source as epitaxial deposition on top of the surface. These atomic displacements compared to computational simulations based on Finite Elements Method.
The first part of my Work was purely technological challenge. I designed and built the experimental UHV system that includes controlled two materials source evaporation system, and STM chamber. Sample is prepared in situ and transferred to the microscope.
I usually deposit Ge on top of Silicon <111> or <100> (Heteroepitaxial system) for creating external stress sources on the silicon surface. I also evaporate Si on top of Si (Homoepitaxial system).
During my work in the lab I'm using different technologies as
ý STM
ý LEED / Auger / Mass Spectrometer
ý SEM
In the Software Field I'm using
ý SolidWorks – 3D Design Sketch Softwae.
ý Patran Nastran Marc - Finite Elements Modeling and Calculations.
ý Matlab.
ý Origin.
And more.