Compensated semiconductor with the presence of both donors and acceptors

exercise 3_4962

A Si sample at T = 300 K contains an acceptor impurity concentration of N A = 10 16 cm -3 . Determine the concentration of donor impurity atoms that must be added so that the Si sample is n -type and the Fermi level (chemical potential) is 0.20 eV below the conduction band edge (CBM).