Electronics and quantum devices

Syllabus

Basic electrical circuit analysis: Linear DC circuits. Voltage and current sources. Kirckhoff's laws. Loop and node voltage analysis methods. Thevenin's and Norton's theorems. The superposition theorem. Capacitance and inductance. First and second order circuits. Transient response of first and second order circuits.

Quantum devices and physics of semiconductors: basic concepts in semiconductors, band structures, band gaps, charge carrier statistics, doping.

• PN junction. Reverse and forward bias. Drift and diffusion currents. Rectifiers. Zener diodes. Photoelectric devices.
• Metal Oxide semiconductor field effect transistor (MOSFET): The structure and band bending of Metal Oxides semiconductor (MOS) capacitor, charge depletion and charge inversion. The I-V characteristic of MOSFET. Saturation current
• Bipolar junction transistor: small signal analysis, ideal BJT. Minority diffusion currents in narrow vs. wide base. BJT in various configurations, dc current and voltage gains. Ebers-Moll model.

Applications of the electronic devices: electronic switches, operational amplifier, photodiode amplifier, precision rectifiers, peak detectors, sample and hold, instrumentation amplifiers, first and second order active filters. Digital circuits and signals.  Combinational logic circuits and synchronous sequential circuits Digital to analog and analog to digital converters.

Basic concepts of superconductivity and superconducting devices: Josephson junctions, SQUID.