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valign="top"> <p class="MsoNormal" style="margin-bottom: 12pt; text-align: center;" align="center"><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p>&nbsp;</o:p></span></p> <p class="MsoNormal" style="margin-bottom: 12pt; text-align: center;" align="center"><b><i><span style="font-size: 24pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">Ofer Moshe</span></i></b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></p> <p class="MsoNormal" style="margin-bottom: 12pt; text-align: center;" align="center"><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p>&nbsp;</o:p></span></p> <div align="center"> <table class="MsoNormalTable" style="width: 574.5pt;" border="0" cellpadding="0" width="766"> <tbody> <tr style=""> <td style="padding: 0.75pt;"> <p class="MsoNormal" style="text-align: center;" align="center"><b><span style="font-size: 16.5pt;">Optical properties of Semiconductor Nanostructures<br> </span></b><b><span style="font-size: 16.5pt;"><img id="_x0000_i1027" src="Ofer.jpg" alt="Picture of Me" height="308" width="461"></span></b><b><span style=""><o:p></o:p></span></b></p> </td> </tr> <tr style=""> <td style="padding: 0.75pt;"></td> </tr> <tr style=""> <td style="padding: 0.75pt;" name="main" valign="top"> <p class="MsoNormal" style="text-align: center;" align="center"><b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">Advisor:</span></b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"> </span><span style="font-size: 13.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><a href="http://www.bgu.ac.il/%7Edanrich"><b><span style="font-size: 9pt;">Prof. Dan Rich</span></b></a></span><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></p> </td> </tr> <tr style=""> <td style="padding: 0.75pt;"></td> </tr> <tr style=""> <td style="padding: 0.75pt;"> <p class="MsoNormal"><b><span style="">Ofer Moshe</span></b><span style=""> [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/CV%20Ofer%20Moshe-Long.pdf"><b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(51, 51, 255);">CV</span></b></a>]<br> PhD student<br> Lab. optical studies of quantum nanostructures<br> Physics Department and The Ilse Katz Center for Nano and Meso Scale Science and Technology <br> Beer-Sheva 84105 Israel<br> Email: </span><span style="font-size: 36pt;"><a href="mailto:mosheo@bgu.ac.il"><b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;;"><large>mosheo@bgu.ac.il</large></span></b></a></span><span style=""><br> Phone: 972-8-6477682<br> Fax: &nbsp; &nbsp; &nbsp;972-8-6472810<br> Location: <a href="http://www.bgu.ac.il/associates/map.htm"><b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(51, 102, 255);">54</span></b></a>/-115<o:p></o:p></span></p> </td> </tr> </tbody> </table> </div> <p class="MsoNormal" style="text-align: center;" align="center"><b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> Research description</span></b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: center;" align="center"><b><span style="font-size: 16pt; color: black;">Effect of stress on the optical properties of GaN/AlN SAQDs grown on Si(111)<u1:p></u1:p></span></b><span style="color: black;"><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: justify;"><span style="color: black;">&nbsp;&nbsp;&nbsp; Heterostrucutres made from semiconductor compounds of elements from the third column of the periodic table and Nitride from the fifth column such as Ga-N (GaN), Al-N (AlN), In-N (InN), and their ternary and quaternary combinations (such as In<sub>x</sub>Ga</span><sub><span style="font-size: 9pt; color: black;">1-x</span></sub><span style="color: black;">N, Al<sub>x</sub>Ga<sub>1-x</sub>N and In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N), have attracted much research attention both on fundamental semiconductor physics and in applications. Many fundamental research issue in this subject remain open, to name a few: screening in heterostrucutres of the electric field crated by the piezoelectric and pyroelectric polarization present in these semiconductors, the exact values of some material parameters relating to the their band structure, stress effects on the electronic and optical properties. On the technological side regarding applications&nbsp; research is done on utilizing these semiconductors for example to: optoelectronic devices (lasers, light emitting diodes, and so on) in the blue-green to ultraviolet region of the electromagnetic spectrum (recent example the Blue-Ray DVD which uses In</span><span style="font-size: 9pt; color: black;">x</span><span style="color: black;">Ga</span><span style="font-size: 9pt; color: black;">1-x</span><span style="color: black;">N/GaN heterostrucutres), IC in high temperature environment due to the large thermal stability of these semiconductors compared to Si an Arsenide based semiconductors and high speed transistors with working frequencies high into the microwave regime. <u1:p></u1:p><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: justify;"><span style="color: black;">&nbsp;&nbsp;Self Assembled Quantum Dots (SAQDs) are strain formed nanostructures namely created using an assembly process (Stransk-Krastnov growth mode). SAQDs are form when a very thin layer of low band gap (large lattice constant) semiconductor is grown epitaxially on a large band gap (small lattice constant) semiconductor substrate. Due to a large mismatch in the lattice constant strain forms and the strain energy is relaxed to equilibrium through the formation of 3D islands. These islands are covered by a semiconductor with large band gap (usually the same semiconductor as the substrate) which converts them to a 3D potential well which enables confinement of electrons and holes.&nbsp;&nbsp;&nbsp; <u1:p></u1:p><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: justify;"><span style="color: black;">&nbsp;&nbsp;&nbsp;A known problem in growing Group III-Nitride semiconductors films (SAQDs or quantum well/wires) is the lack of suitable substrates. A common substrate is Si(111), (integrating any group III-V compound semiconductors films with existing mature Si fabrication technology is one of the important future goals of the micro/nano electronics industry) along with sapphire. It is well known that when one grows group III-Nitride film on a Si(111) substrate cracks appear on the grown film. The crack results from <b>thermal expansion coefficient mismatch</b> between the group III-N film and the&nbsp; Si(111) substrate. When the wafer is cooled to room temperature from growth temperature (~500-600 Celsius) the III-N film contracts in a faster rate then the Si(111) substrate. This difference between contraction rates lead to the formation of stress (in addition to the stress already present from SAQDs growth) in the layer of SAQDs which is relaxed by the formation of cracks.<u1:p></u1:p><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: justify;"><span style="color: black;">&nbsp;&nbsp;&nbsp;It was found that it is possible to use cracks as an excellent way to perturb the strain which is present in heterostrucutres, namely using the cracks to do fundamental research and not treat them as an undesired artifact of the growth process which should be eliminated. The cracks form an additional stress configuration in the film of SAQDs which is: <b><i>Uniaxial </i></b>(&sigma;<sub>yy</sub></span><span style="font-size: 8pt; color: black;"> </span><span style="color: black;">&gt;0, &sigma;<sub>xx</sub> =0)<b><i> </i></b>in close proximity to the crack (&ge;0.5&mu;m), <b><i>Biaxial</i></b><i> </i>(&sigma;<sub>yy</sub></span><span style="font-size: 8pt; color: black;"> </span><span style="color: black;">&gt;0, &sigma;<sub>xx</sub></span><span style="font-size: 8pt; color: black;"> </span><span style="color: black;">&gt;0)<i> </i>in regions far from a crack (&le;3&mu;m) and in the intermediate region linear change in &sigma;<sub>xx</sub> until &sigma;<sub>xx</sub>=&sigma;<sub>yy</sub>.<u1:p></u1:p><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: justify;"><span style="color: black;">&nbsp;&nbsp;The implantation of this feature&nbsp;is done by exciting (creating excess electron hole pairs) the SAQDs in local way, namely exciting small amount of SAQDs (typical SAQDs density is 5"10<sup>11</sup>cm<sup>-2</sup> and mall amount is ~100) at different distances from the crack, which means that SAQDs with different thermal stress values are excited as one moves from the crack edge to region far away from the crack. The excitation method used to achieve this is <b><i>Cathodoluminescence (CL),</i></b> which is based on a <i>Scanning Electron Microscope (SEM)</i> with an optical collection system that collects the luminescence emitted from the sample due to the electron beam excitation. This method has a much larger spatial resolution compared to excitation by a laser beam <i>(Photoluminescence)</i> which is in the sub micro regime.<u1:p></u1:p><o:p></o:p></span></p> <p class="MsoNormal" style="text-align: justify;"><span style="color: black;">&nbsp;&nbsp;I perform measurements of the optical properties of a stacked layer of GaN SAQDs with AlN barriers. The measurements include polarization of the light intensity emitted from the SAQDs ground state emission, ground emission decay time and spectra, as a function of distance from the crack, temperature and degree of excitation. This measurements enable me to build models explaining the effects of stress on the electronic structure (energy levels, wavefunctions) This measurements enable me to build qualitative and quantative theoretical models explaining the effects of stress on the electronic structure and optical properties (energy levels, wavefunctions, optical transition matrix elements,&hellip;) of the SAQDs. This will enable an understanding on how stress affects the optical properties of group III-N SAQDs. And possibly in the future to tailor stress effects on these SAQDs to devices.<u1:p></u1:p><o:p></o:p></span></p> <p class="MsoNormal" style="margin-bottom: 12pt; text-align: center;" align="center"><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p>&nbsp;</o:p></span></p> <p style="text-align: justify;"><b><u><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">I also conduct research on:</span></u></b><b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></b></p> <span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;;">1. <span style="font-weight: bold;">Nanostructures made from II-VI semiconductors</span>. <br> 2. InxGa1-x N/GaN Multiple Quantum Well used as syntilator for electron detectors. <br> 3. Carrier dynamics in InxGa1-xAs/GaAs Quantum Dots. </span><br> <p style="margin-bottom: 12pt; text-align: justify;"><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"></span><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"></span><b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></b></p> </td> </tr> <tr style="height: 15pt;"> <td style="padding: 0.75pt; width: 570pt; height: 15pt;" width="760"> <p class="MsoNormal"><b><span style="font-family: &quot;Poor Richard&quot;,&quot;serif&quot;; color: red;"><a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/hebrewabstract.pdf"><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(51, 51, 255);"></span></a><i>&nbsp;&nbsp;&nbsp; &nbsp;&nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp;&nbsp; &nbsp; &nbsp; &nbsp;&nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp; &nbsp;&nbsp;&nbsp; &nbsp;&nbsp;&nbsp; &nbsp;&nbsp;&nbsp; &nbsp;&nbsp;&nbsp; &nbsp;&nbsp;&nbsp; &nbsp;&nbsp;&nbsp; </i></span></b><span style="font-family: &quot;Poor Richard&quot;,&quot;serif&quot;;"><a href="http://physics.bgu.ac.il/%7Emosheo/ImageGallery.html"><b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(51, 51, 255);">Image Gallery</span></b></a><o:p></o:p></span></p> </td> </tr> <tr style=""> <td style="padding: 0.75pt;"></td> </tr> <tr style=""> <td style="padding: 0.75pt; width: 570pt;" width="760"> <p class="MsoNormal"><big><b><u><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">Publications:</span></u></b></big><i><span style="font-size: 12pt; line-height: 150%; font-family: &quot;Times New Roman&quot;,&quot;serif&quot;;"></span></i></p> <p class="MsoNormal"> <span style="color: rgb(153, 0, 0); font-weight: bold;">Polarized cathodoluminescence study of GaN/AlN quantum dots with variable excitation</span><i>, </i><b>O. Moshe</b>, D. H. Rich, B. Damilano and J. Massies, <b>In perpetration, to be submitted to J. Appl. Phys.</b></p> <p class="MsoNormal"><b><i><o:p></o:p></i></b></p> <p class="MsoNormal"><span style="font-weight: bold; color: rgb(153, 0, 0);">Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses</span><i>, </i><b><span style="">O. Moshe</span></b><span style="">, D. H. Rich, B. Damilano and J. Massies, <b><u>Accepted for publication</u> (<i>in-press) </i>in<i> </i>Journal of Vacuum Science and Technology B.</b></span></p> <p class="MsoNormal"><span style=""></span><i> <o:p></o:p></i></p> <p class="MsoNormal"><small style="color: rgb(153, 0, 0);"><span style="font-size: 12pt; line-height: 150%; font-family: &quot;Times New Roman&quot;,&quot;serif&quot;; font-weight: bold;">Carrier relaxation dynamics of Zn<sub>x</sub>Cd<sub>1-x</sub>Se/C core/shell nanocrystals with phase separation as studied by time-resolved cathodoluminescence</span></small><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">[<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/Carrier%20relaxation%20dynamics%20of%20ZnxCd1-xSeC%20coreshell%20nanocrystals%20with%20phase%20separation%20as%20studied%20by%20time-resolved%20cathodoluminescence"><span style="font-size: 9pt;">pdf</span></a>]</span></b><i><span style="font-size: 12pt; line-height: 150%; font-family: &quot;Times New Roman&quot;,&quot;serif&quot;;"></span></i><span style="font-size: 12pt; line-height: 150%; font-family: &quot;Times New Roman&quot;,&quot;serif&quot;;"></span></p> <p class="MsoNormal"><span style="font-size: 12pt; line-height: 150%; font-family: &quot;Times New Roman&quot;,&quot;serif&quot;;">Y. Estrin, D. H. Rich, <b>O. Moshe</b>, Sayan Bhattacharyya, and A. Gedanken, Appl. Phys. Letts <b>95 </b>181903 (2009).<o:p></o:p></span></p> <p class="MsoNormal"></p> <p class="MsoNormal"><big><b><u><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"></span></u></b></big><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"> </span><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">Highly Luminescent ZnxCd1-xSe/C Core/Shell Nanocrystals: Large Scale Synthesis, Structural and Cathodoluminescence Studies </span></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">[<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/Highly%20Luminescent%20ZnxCd1-xSeC%20Core%20Shell%20Nanocrystals%20Large%20Scale%20Synthesis,%20Structural%20and%20Cathodoluminescence%20Studies.pdf"><span style="font-size: 9pt;">pdf</span></a>]</span></b><br> <span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">S. Bhattacharyya, Y. Estrin, <b>O. Moshe</b>, D. H. Rich, L. A. Solovyov, and A. Gedanken, ACS Nano <span style="font-weight: bold;">3</span> (7) 1864 (2009)</span><b><span style="background: white none repeat scroll 0% 50%; -moz-background-clip: initial; -moz-background-origin: initial; -moz-background-inline-policy: initial; font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);"><br> </span></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);"><br> Perturbing GaN/AlN quantum dots with uniaxial stressors [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/Perturbing%20GaNAlN%20quantum%20dots%20with%20uniaxial%20stressors.pdf"><span style="font-size: 9pt;">pdf</span></a>]</span></b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">O. Moshe</span></b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">, D. H. Rich, B. Damilano and J. Massies<b>,</b> <em><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; font-style: normal;">Physica Status Solidi&nbsp;(c)</span></em><i>,</i> <b>6, </b>No. 6 1432 (2009)</span><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);"><br> A one-step,template-free synthesis, characterization, optical and magnetic properties of Zn<sub>1-x</sub>Mn<sub>x</sub>Te nanosheets [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/A%20One-step,%20Template-free%20Synthesis,%20Characterization,%20Optical%20and%20Magnetic%20Properties%20of%20Zn1-xMnxTe%20Nanosheets.pdf"><span style="font-size: 9pt;">pdf</span></a>]</span></b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><st1:metricconverter style="background-position: left bottom; background-image: url(res://ietag.dll/#34/#1001); background-repeat: repeat-x;" tabindex="0" u2:st="on" productid="95. A">A</st1:metricconverter>. Gedanken, S. Bhattacharyya, D. Zitoun, Y. Estrin, <b>O. Moshe</b>, and D. H. Rich,</span><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">&nbsp;</span><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">Chem. Mater. <b>21</b>, 326 (2009).<br> </span><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);"><br> Effect of a uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111) [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/Effect%20of%20uniaxial%20stress%20on%20the%20polarization%20of%20light%20emitted%20from%20GaNAlN%20quantum%20dots%20grown%20on%20Si%28111%29.pdf"><span style="font-size: 9pt;">pdf</span></a>]</span></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(204, 102, 0);"><br> </span></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">O. Moshe</span></b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">, D.H. Rich, B. Damilano and J. Massies<i>, </i>Phys. Rev. B <b>77</b> 155322 (2008)<br> <i><br> </i></span><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">One-Step Solvent-free Synthesis and Characterization of Zn</span></b><b><span style="font-size: 7.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">(1-x)</span></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">Mn</span></b><b><span style="font-size: 7.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">x</span></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">Se@C Nanorods and Nanowires [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/One-Step%20Solvent-Free%20Synthesis%20and%20Characterization%20of%20Zn1-xMnxSe@C%20Nanorods%20and%20Nanowires.pdf"><span style="font-size: 9pt;">pdf</span></a>]</span></b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">Sayan Bhattacharyya, Ilana Perelshtein, <b>Ofer Moshe</b>, Daniel H. Rich, and Aharon Gedanken Adv. Funct. Mater. <b>18</b> 1641 (2008)</span><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span><i><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span></i><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">Microcrack-induced strain relief in GaN/AlN&nbsp; quantum dots grown on Si(111) [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/Microcrack-induced%20strain%20relief%20in%20GaNAlN%20quantum%20dots%20grown%20on%20Si%28111%29.pdf"><span style="font-size: 9pt;">pdf</span></a>]<br> </span></b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">G. Sarusi, <b>O. Moshe</b>, S. Khatsevich, D. H. Rich and B. Damilano, Phys. Rev B&nbsp;<b>75</b>&nbsp;075306 (2007)<br> <br> </span><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: rgb(153, 0, 0);">Cathodoluminescence Study of Micro-crack-induced Stress Relief for AlN Films on Si(111) [<a href="http://physics.bgu.ac.il/%7Emosheo/ARCHIVE/Cathodoluminescence%20Study%20of%20Micro-crack-induced%20Stress%20Relief%20for%20AlN%20Films%20on%20Si%28111%29.pdf"><span style="font-size: 9pt;">pdf</span></a>]<br> </span></b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">G. SARUSI, <b>O. MOSHE</b>, S. KHATSEVICH, D.H. RICH, J. SALZMAN, B. MEYLER, &nbsp;M. SHANDALOV and Y. GOLAN, J. Elec. Mater.&nbsp;<b>35 </b>L15 (2006)</span><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></p> </td> </tr> <tr style=""> <td style="padding: 0.75pt; width: 570pt;" width="760"></td> </tr> <tr style=""> <td style="padding: 0.75pt;"> <p class="MsoNormal"><b><u><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><big>Attending Conferences and Schools</big></span></u></b></p> <p class="MsoNormal"><b><u><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><span style="text-decoration: underline;"></span></span></u></b></p> <p class="MsoNormal"><b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">American Physical Society March 2010 Meeting </span></b><span class="detail1"><b><span style="font-size: 9pt;">[</span></b></span><span style="font-size: 36pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><a href="http://www.aps.org/meetings/march/index.cfm"><b><span style="font-size: 9pt; color: black;">Link</span></b></a></span><span class="detail1"><b><span style="font-size: 9pt;">]</span></b></span></p> <p class="MsoNormal"><span class="detail1"><b><span style="font-size: 9pt;"></span></b></span><b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"></span></b><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><span class="detail1"><i>March 2010, Portland, Oregon, USA.<br> </i></span></span><b><u><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"></span></u></b></p> <p class="MsoNormal"><b><u><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"> </span></u></b><span class="detail1"><b><span style="font-size: 10pt;"></span></b></span></p> <p class="MsoNormal"><span class="detail1"><b><span style="font-size: 10pt;">2nd International Summer School &nbsp;Physics of Functional Micro- and Nanostructures </span></b></span><span class="detail1"><b><span style="font-size: 9pt;">[</span></b></span><span style="font-size: 36pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><a href="http://www.physnet.uni-hamburg.de/iss/index.html"><b><span style="font-size: 9pt; color: black;">Link</span></b></a></span><span class="detail1"><b><span style="font-size: 9pt;">] </span></b></span><span style="font-size: 9pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> <span class="detail1"><i>September 2008, Hamburg, Germany.</i></span><br> <b><br> </b></span><span class="detail1"><b><span style="font-size: 10pt;">The 35th International Symposium on Compound Semiconductors (ISCS)</span></b></span><span class="detail1"><b><span style="font-size: 9pt;"> [<a href="http://www.iscs2008.com/">Link</a>]</span></b></span><span style="font-size: 24pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><br> </span><span class="detail1"><i><span style="font-size: 9pt;">September 2008, "Europa-Park&ldquo;, Rust near Freiburg, Germany.</span></i></span><span style="font-family: &quot;Poor Richard&quot;,&quot;serif&quot;;"> <o:p></o:p></span></p> </td> </tr> <tr style=""> <td style="padding: 0.75pt;"></td> </tr> <tr style=""> <td style="padding: 0.75pt; width: 570pt;" width="760"> <p class="MsoNormal"><b><u><span style="font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><big>Teaching</big><br> </span></u></b><b><span style="font-size: 10pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;">Physics 1 (Mechanics)<br> Physics 2 (Electricity)<br> Second year student lab (Experiments Laser and Microwave)</span></b><span style="font-size: 10.5pt; font-family: &quot;Arial&quot;,&quot;sans-serif&quot;; color: black;"><o:p></o:p></span></p> </td> </tr> </tbody> </table> </div> <p class="MsoNormal"><span style=""> <script src="Itamar%20Sela_files/urchin.js" type="text/javascript"> </script> <script type="text/javascript"> _uacct = "UA-2810399-1"; urchinTracker(); </script><o:p>&nbsp;</o:p></span></p> </div> </body> </html>